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thin film circuit

Thin Film Fabrication Technology

thin film circuit
Product details
  • Al2O3、AlN, BeO, Sapphire, quartz and hi-K dielectrics
  • Wide selection of material and metallization
  • Accurately controlled dimensions and tolerances
  • Hollow plated vias
  • Plating and etching facilities
  • Extensive dicing and laser machining facilities

 

 

一、Substrate Type and Specifications

Substrate Material

Purity

A Surface

Roughness

B Surface

Roughness

Dielectric

Constant

Thermal

Conductivity

Dissipation Factor

(Loss Tangent)

%

µ"

µ"

@1MHz

W/mK

@1MHz

Asfired Alumina (A12O3)

99.6

3

3

9.9±1

26.9

0.0001

Polished Alumina (Al2O3)

99.6

1

1 or 12

9.9±1

26.9

0.0001

Aluminum Nitride (AlN)

98

3

3

8.6

170

0.001

Beryllium Oxide (BeO)

99.5

3

10

6.5

270

0.0004

Sapphire (A/C planeAl2O3)

100

1

1

10.0

-

0.00086

Quartz (SiO2)

100

1

1

4.4

-

0.000015

 

二、Metalizations

Metallization

System

Application

component

Attachment Method

Typical

thickness range

Max. use

temperature

TiW(Ti)/Pt/Au

Standard thin film metal system for conductors

Au/Sn

Au/Si

Au/Ge

Au/Sn

Au/Si

Au/Ge Eutectic

Epoxy

TaN25–100Ω /sq

TiW(Ti)500–800Å

Au0.5–5µm

typical = 3µm

 

425

TaN/TiW(Ti)/Au

Standard thin film metal system for conductors with resistor layer

380

TiW(Ti)/Ni/Au

Conductor applications that require Pb/Sn soldering

Au/Sn

Au/Si

Au/Ge

Pb/Sn

Au/Sn

Au/Si

Au/Ge EutecticPb/Sn

Epoxy

TaN25–100Ω /sq

TiW(Ti)500–800Å

Ni1000–10000Å

Au0.5–5µm

typical = 3µm

 

350

TaN/TiW(Ti)/Ni/Au

Conductor with resistor layer applications that require Pb/Sn soldering

350

TaN/TiW (Ti)/Au/

Cu/Ni/Au

High current low loss applications

Au/Sn

Au/Si

Au/Ge

Pb/Sn Au/SnAu/Si

Au/Ge EutecticPb/Sn

TaN25–100Ω /sq

TiW(Ti)500–800Å

Au0.2–1µm

Cu0.5–12µm

Ni0.5–2µm

Au0.5-5µm

350

 

三、Standard Dimensions and Tolerance

*Aspect ratio is defined as: Dv/Ts. Where

Dv = Diameter of the via (thru hole)

Ts = Thickness of the substrate

 

项目

Specifications

Typical

英制

公制

Features

Overall circuit size tolerance

±1mil

±25µm

Diced features

±1mil

±25µm

Minimum distance from the diced edge:

1mil

25µm

Laser machined features

±2mil

±50µm

Minimum distance from the laser machined edge:

2mil

50µm

Conductor

Minimum line width:

0.8mil

20µm

Minimum gap:

0.4mil

10µm

Dimensional tolerance on critical areas:

±0.1mil

±2.5µm

Dimensional tolerance on noncritical areas:

±0.2mil

±5µm

Metal thickness tolerance:

±20%

Resistor

Minimum length and width of resistors

2×2mil

50×50µm

Resistor tolerance:

±10%/±5%/±1%

Watts density:

3.8mW/mil2

6W/mm2

Vias

*Via hole diameter aspect ratio:

0.6

Via hole diameter tolerance:

±2mil

±50µm

Minimum annular ring around metalized cutout:

4mil

100µm

Minimum via hole spacing

One diameter

Filled material

电镀通孔Hollow plated vias

AuCu实心孔Au/Cu solid filled vias

Slot

Metallization pullback:

±2mil

±50µm

Metalized edge wrap minimum recess:

4mil

100µm

Minimum radius:

2mil

50µm

 

四、Photomasks Requirements

  • Auto CAD .DWG or .DXF files
  • Gerber photo plotter data
  • DPF files
  • DCF files

五、Documentation requirements

  • Product structures with different meanings such as conductive tapes, resistors, mounting holes, grounding holes, product outlines, etc. must be drawn using different levels.
  • Each layer of graphics must be closed without overlapping intersections and color filling.
  • Drawing ratio 1:1, unit of imperial or metric
  • The following parameters are indicated in the drawings:
Material & Thickness Size of substrates
Quantity Metal system on both sides
Sheet resistance Tolerance of resistors
Die attach method Tolerance of line widths

                  

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